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| BT100-8 Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current (IT(RMS)=0.8 A) Low On-State Voltage (1.2V(Typ.)@ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings (TJ=25 unless otherwise specified) Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG Parameter Repetitive Peak Off-state Voltage Average On-State Current R.M.S On-State Current Surge On-State Current It for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Condition Ratings 600 Units V A A A A S W W A V Half Sine Wave : TC =74 All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave NonRepetitive t = 8.3ms TA=25, Pulse Width1.0 TA=25, t=8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 -40 -40 ~ ~ 125 150 1 BT100-8 Electrical Characteristics Ratings Symbol Items VAK=VDRM, Conditions Min Typ 1.2 Max 10 200 1.7 200 500 or VRRM:RGK=1000 Tc=25 Tc=125 Unit IDRM Repetitive Peak OffState Current Peak On-State Voltage(1) Gate Trigger Current(2) VTM (ITM=1A, Peak) VAK=6V, RL=100 Tc=25 Tc=-40 VD=7V, RL=100 Tc=25 Tc=-40 VAK=12V, RL=100 Tc=125 V IGT VGT Gate Trigger Voltage(2) Non-Trigger Gate Voltage(1) 0.2 0.8 1.2 V VGD V dv/dt Critical Rate of Rise Off-State Voltage Critical Rate of Rise Off-State Voltage VD=Rated VDRM, Exponential wave-form RGK=1000 TJ=125 500 800 V/ di/dt ITM=2A ; Ig=10mA VAK=12V, Gate Open Initiating Current=50mA Tc=25 Tc=-40 Junction to case Junction to Ambient 50 A/ IH Rth(j-c) Rth(j-a) Holding Current Thermal Thermal Impedance Impedance 2 5.0 10 60 150 mA /W /W Notes : 1. Pulse Width 1.0ms, Duty cycle 1% 2. Does not include RGK in measurement. 2 BT100-8 3 BT100-8 4 BT100-8 * TO-92 5 |
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